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| Si4876DY Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.005 @ VGS = 4.5 V 0.0075 @ VGS = 2.5 V ID (A) 21 17 D SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4876DY SI4876DY-T1 (with Tape and Reel) S N-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Avalanche Current Single Avalanche Energy Continuous Source Current (Diode Maximum Power Dissipationa Operating Junction and Storage Temperature Range Conduction)a TA = 25_C TA = 85_C L = 0 1 mH 0.1 TA = 25_C TA = 85_C Symbol VDS VGS 10 secs 20 "12 21 Steady State Unit V 14 10 50 42 88 mJ 1.3 1.6 0.8 - 55 to 150 W _C mS A ID IDM IAS EAS IS PD TJ, Tstg 15 3 3.6 1.9 THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambienta Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71312 S-03950--Rev. C, 26-May-03 www.vishay.com t v 10 sec Steady State Steady State RthJA RthJF Symbol Typical 29 67 13 Maximum 35 80 16 Unit _C/W 1 Si4876DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 85_C VDS w 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 21 A VGS = 2.5 V, ID = 17 A VDS = 10 V, ID = 21 A IS = 3 A, VGS = 0 V 50 0.0037 0.0058 17 0.8 1.2 0.005 0.0075 S V 0.6 "100 1 20 V nA mA A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 3 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 10 V, RG = 6 W 2.0 VDS = 10 V, VGS = 4.5 V, ID = 21 A 55 13 11 2.7 40 30 175 70 56 4.6 60 45 260 105 85 ns W 80 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 5 thru 2.5 V 40 I D - Drain Current (A) I D - Drain Current (A) 2.0 V 40 50 Transfer Characteristics 30 30 20 20 TC = 125_C 10 25_C - 55_C 0 0.0 10 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71312 S-03950--Rev. C, 26-May-03 Si4876DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.010 8000 Ciss C - Capacitance (pF) 6000 Capacitance r DS(on) - On-Resistance ( W ) 0.008 VGS = 2.5 V 0.006 4000 0.004 VGS = 4.5 V 2000 0.002 Crss 0 4 Coss 0.000 0 10 20 30 40 50 0 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 21 A 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 21 A 6 r DS(on) - On-Resistance (W) (Normalized) 60 80 100 120 140 8 1.4 1.2 4 1.0 2 0.8 0 0 20 40 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.020 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) I S - Source Current (A) 0.015 TJ = 150_C 10 0.010 TJ = 25_C 0.005 ID = 21 A 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0.000 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) Document Number: 71312 S-03950--Rev. C, 26-May-03 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si4876DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 ID = 250 mA 0.2 V GS(th) Variance (V) 40 - 0.0 Power (W) 60 50 Single Pulse Power 30 - 0.2 20 - 0.4 10 - 0.6 - 50 - 25 0 25 50 75 100 125 150 0 10 -2 10 -1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 PDM 2. Per Unit Base = RthJA = 67_C/W Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71312 S-03950--Rev. C, 26-May-03 |
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